Growth of Germanium Nanowires on Silicon(111) Substrates by Molecular Beam Epitaxy
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منابع مشابه
Growth of germanium nanowires on silicon(111) substrates by molecular beam epitaxy.
Heteroepitaxial growth of Ge nanowires was carried out on Si(111) substrates by MBE. Au seeds were used as precursor for the VLS growth of the nanowires. Even if the Au droplets do not act as catalyst for the dissociation of gas, they are local preferential areas where the energetic barrier of Ge nucleation is lowered compare to the remaining non activated surface. Two sets of Au seeds were use...
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ژورنال
عنوان ژورنال: Journal of Nanoscience and Nanotechnology
سال: 2011
ISSN: 1533-4880,1533-4899
DOI: 10.1166/jnn.2011.4288